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NUS2045MN, NUS3045MN
MAXIMUM RATINGS (T A = 25 ° C unless otherwise stated)
Rating
OUT Voltage to GND
Input and CNTRL Pin Voltage to GND
V CC Maximum Range
Maximum Power Dissipation ( Note 1 )
Pin
7
1
3
8
?
Symbol
V O
V input
V CNTRL
V CC(max)
P D
Min
?0.3
?0.3
?0.3
?0.3
?
Max
30
30
13
30
1.0
Unit
V
V
V
W
Thermal Resistance Junction?to?Air ( Note 1 )
Junction Temperature
Operating Ambient Temperature
V CNTRL Operating Voltage
Storage Temperature Range
ESD Performance (HBM) ( Note 2 )
OVP IC
P?Channel FET
?
?
?
3
?
1,2,3,7,8,10
R θ JA
T J
T A
?
T stg
?
?
?
?40
0
?65
2.5
108.6
104.3
150
85
5.0
150
?
° C/W
° C
° C
V
° C
kV
Drain?to?Source Voltage
NUS2045MN
NUS3045MN
V DSS
?20
?30
V
Gate?to?Source Voltage
NUS2045MN
NUS3045MN
Continuous Drain Current, Steady State, T A = 25 ° C (Note 1)
NUS2045MN
NUS3045MN
V GS
I D
?8
?20
8
20
?1.0
?1.0
V
A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Surface?mounted on FR4 board using 1 inch sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
2. Human body model (HBM): MIL STD 883C Method 3015?7, (R = 1500 W , C = 100 pF, F = 3 pulses delay 1 s).
http://onsemi.com
3
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